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ABF Substrate Technology
Roadmap |
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Products Roadmap/
Development Schedule
Process |
Item |
Current Capability |
2024 |
2025 |
H1 |
H2 |
Structure |
Layer Count |
9/2/9 |
22L |
>22L |
Body Size |
7.8~67.5 (mm) |
85*98 (mm) |
100*100 (mm) |
Core Substrate Process |
Core |
Core Thickness |
200um↑ |
200um↑ |
150um |
PTH |
PTH/Land |
MTH:150/250(um) |
MTH:100/200
(um) |
MTH:100/175 (um) |
LTH:80/180 (um) |
LTH:80/150 (um) |
Line/Space (Subtractive) |
35/35 (um) |
20/20(um) |
15/15(um) |
Build-up Process |
Laser |
Via/Pad |
60/85 (um) |
55/80 (um) |
Via Registration |
+/-12.5um |
+/-12.5um |
+/-10um |
+/-8um |
Stack Via |
5 Stacked Vias |
6 Stacked Vias |
- |
DFR Formation |
Line/Space |
9/12 (um) |
10/10 (um) |
8/8 (um) |
Solder Resist Process |
SR |
Thickness |
21um |
15um |
10um |
Registration |
+/-12.5um |
+/-10um |
+/-8um |
SRO |
70um |
60um |
55um |
Surface Finish |
Lead Application |
Immersion Tin |
Lead Free |
Immersion Tin, ENEPIG, OSP |
Application |
LGA Application |
ENEPIG |
C4 Bump
Formation |
Bump Pitch |
130um/127um |
110um |
90um |
Bump Height
(Coin Bump) |
10~30 (um) |
5~30 (um) |
Bump Diameter
(Coin Bump) |
25~130 (um) |
25~120 (um) |
25~90 (um) |
25~70 (um) |
New Material |
SAC305, SnCu0.7 |
Green Material Set
Category |
Item |
Current Capability |
2024 |
2025 |
H1 |
H2 |
Material |
Core |
Hitachi E679FGR, E700GR, E705G, E705G(LH), Panasonic R1515SL, R1515A, R1515W, MGC HL832NSF, HL832NSA |
E705G(X), E795G, E795G(LH) |
Ultra Low CTE Core (<3ppm/℃) |
Plugging Ink |
PHP900 IR6P, IR10F |
PHP900 IR6P, IR-10F |
Ultra Low CTE Material |
Dielectric |
GX-13/GX-92/GX-T31/GL102/GZ41/NX04H/GL103 |
GL107 |
Low Dk&Df/Low CTE Material |
SR |
SR-7300G/AUS-703/AUS-410/AUS-G2/SR-1 |
SR7400/SRFN/SRFK |
New |
Bumping |
SAC305/SC07 |
Plated Bump |
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網站更新日期:
2024/3/28
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