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 Home > Technology > IC Substrate >  ABF Substrate Technology Roadmap
 
   
PCB
IC Substrate 

ABF Substrate   
     Technology Roadmap    
PP Substrate  
     Technology Roadmap  

 

ABF Substrate Technology Roadmap
 

Products Roadmap/ Development Schedule 
 
Process Item Current Capability 2024 2025
H1 H2
Structure Layer Count 9/2/9 22L >22L
Body Size 7.8~67.5 (mm) 85*98 (mm) 100*100 (mm)
Core Substrate Process Core Core Thickness 200um↑ 200um↑ 150um
PTH PTH/Land MTH:150/250(um) MTH:100/200
(um)		 MTH:100/175 (um)
LTH:80/180 (um) LTH:80/150 (um)
Line/Space (Subtractive) 35/35 (um)   20/20(um) 15/15(um) 
Build-up Process Laser Via/Pad 60/85 (um) 55/80 (um)
Via Registration +/-12.5um +/-12.5um +/-10um +/-8um
Stack Via 5 Stacked Vias 6 Stacked Vias -
DFR Formation Line/Space 9/12 (um) 10/10 (um) 8/8 (um)
Solder Resist Process SR Thickness 21um 15um 10um
Registration +/-12.5um +/-10um +/-8um
SRO 70um 60um 55um
Surface Finish Lead Application Immersion Tin
Lead Free Immersion Tin, ENEPIG, OSP
Application
LGA Application ENEPIG
C4 Bump
Formation		 Bump Pitch 130um/127um 110um 90um
Bump Height
(Coin Bump)		 10~30 (um) 5~30 (um)
Bump Diameter
(Coin Bump)		 25~130 (um) 25~120 (um) 25~90 (um) 25~70 (um)
New Material SAC305, SnCu0.7

 

Green Material Set 
 
Category  Item Current Capability 2024 2025
H1 H2
Material Core  Hitachi E679FGR, E700GR, E705G, E705G(LH), Panasonic R1515SL, R1515A, R1515W, MGC HL832NSF, HL832NSA E705G(X), E795G, E795G(LH)  Ultra Low CTE Core (<3ppm/℃)
Plugging Ink PHP900 IR6P, IR10F PHP900 IR6P, IR-10F Ultra Low CTE Material
Dielectric GX-13/GX-92/GX-T31/GL102/GZ41/NX04H/GL103 GL107 Low Dk&Df/Low CTE Material
SR SR-7300G/AUS-703/AUS-410/AUS-G2/SR-1 SR7400/SR FN/SRFK New
Bumping SAC305/SC07 Plated Bump

　

 

WEB Updated Date: 2024/3/28

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