ABF Substrate TechnologyRoadmap
Products Roadmap/Development Schedule
| Process | Item | CurrentCapability | 2025 | 2026 | ||
|---|---|---|---|---|---|---|
| H1 | H2 | |||||
| Structure | Layer Count | 11/N/11 | 24L | >24L | ||
| Body Size | 7.8~118(mm) | 85, 98, 118(mm) | >120(mm) | >140(mm) | ||
| Core Substrate Process | Core | Core Thickness | 200µm↑ | 200µm↑ | 150µm | |
| PTH | PTH/Land | MTH:150/250(µm) | MTH:100/200(µm) | MTH:100/175(µm) | ||
| LTH:80/180(µm) | LTH:80/135(µm) | |||||
| Line/Space (Subtractive) | 35/35(µm) | 20/20(µm) | 15/15(µm) | |||
| Build-up Process | Laser | Via/Pad | 50/75(µm) | 45/70(µm) | 45/65(µm) | 45/61(µm) |
| Via Registration | +/-12.5µm | +/-12.5µm | +/-10µm | +/-8µm | ||
| Stack Via | 5 Stacked Vias | 6 Stacked Vias | - | |||
| DFR Formation | Line/Space | 9/12(µm) | 8/8(µm) | 6/7(µm) | ||
| Solder Resist Process | SR | Thickness | 21µm | 15µm | 10µm | |
| Registration | +/-12.5µm | +/-10µm | +/-8µm | |||
| SRO | 70µm | 55µm | 50µm | |||
| Surface Finish | Lead Application | Immersion Tin | ||||
| Lead Free Application |
Immersion Tin, ENEPIG, OSP | |||||
| LGA Application | ENEPIG | |||||
| C4 Bump Formation | Bump Pitch | 110µm | 90µm | <90µm | ||
| Bump Height (Coin Bump) |
10~30(µm) | 5~30(µm) | ||||
| Bump Diameter (Coin Bump) |
25~130(µm) | 25~120(µm) | 25~90(µm) | 25~70(µm) | ||
| New Material | SAC305, SnCu0.7 | |||||
Green Material Set
| Category | Item | CurrentCapability | 2025 | 2026 | |
|---|---|---|---|---|---|
| H1 | H2 | ||||
| Material | Core | Resonac E700GR, E705G(X, LH) MGC HL832NSF HL832NSA |
E795G(X, LH) E795UC(X, LH) |
Ultra Low CTE Core (< 3ppm /℃) | |
| Plugging Ink | IR6P/ IR10FH | IR6P IR-10F IR15S3 IR15F6 |
Ultra Low CTE Material | ||
| Dielectric | GX13/GX92/GXT31 GZ41/GL102/GL103 NX04H | GL107 NQ08 QX03 |
Low Dk&Df/Low CTE Material | ||
| SR | SR7300 SR7400 SRFA SR1 |
SR7500 SRFN/SRFK |
New | ||
| Bumping | SAC305/SnCu0.7 | Plated Bump | |||