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 首頁 > 技術專區 > IC Substrate >  WB Bond Substrate Technology Roadmap
 
   
PCB
IC Substrate 

Flip Chip Substrate   
    Technology Roadmap 
   
Wire Bond Substrate  
    Technology Roadmap 
 

 

Wire Bond Substrate Technology Roadmap
 

Category Item Current capability
(units: um)
By 2011Q4 By 2012H1 By 2012H2
Material Core HL832NS/NXA/ E679FGB/ DS 7409HGBL /HGBLE / Sumitomo 4785GSB/THG HL832NS(LC) E700G DS 7409HGBX Sumitomo 9979 -
Solder mask AUS5,AUS303, AUS308, AUS320, AUS410 AUS SR1 New film type SR -
Thickness 2L/ Core 120/50 100/40 - 90/35
4L/ Core/ PP 210/50/35 200/40/30 180/40/30 170/35/25
Routing
density
Line/ Space 20/20

20/20

20/20 15/15
BF pitch/ Width 70/35 70/35 65/35 60/30
C4 pitch 150 140 - 130
Ball pitch 350 325 300 275
Laser/ Pad 70/130 65/125 65/105 65/95
Mech./ Pad 100/200 75/175 75/160 -
SRO 75 70 65 60
Structure Special structure 2L, 4L, 1-2-1, 6L, 1-4-1, 2-2-2, 1-2-2-1, 8L 3-2-3 Built-up+ Stacked via,
(core 60um)
10L, 4-2-4 Embedded Coreless 4L Embedded
Surface finish PBGA/WB-CSP Ni/Au, Selective Ni/Au, ENEPIG, OSP, AFOP, Etch-Back, Tailess - - -
FC-CSP ENIG, ENEPIG, IT, OSP, AFOP - - -

更新日期: 100/12/27