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 首頁 > 技術專區 > ICSubstrate > Flip Chip Substrate Technology Roadmap
 
   
 
PCB
IC Substrate 

Flip Chip Substrate   
    Technology Roadmap 
   
Wire Bond Substrate  
    Technology Roadmap 
 

 

   

Flip Chip Substrate Technology Roadmap  
 
 

Products Roadmap/ Development Schedule 
 
Process Item Development schedule
2010 2011
Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4
Core substrate process Core Core thickness 0.2mm 0.2mm
PTH drill Through pitch 225(um) 225(um)
Through diameter 75(um) 75(um)
DES Line /  Spece 35/35(um) 30/30(um)
Build up process Laser Via / Pad 60/90(um) 55/80(um)
Via registration 15(um) 12.5(um)
Stack via 4 stacked vias 5 stacked vias
DFR formation Line / Spece 9/12(um) 8/8(um)
Solder resist process SR Thickness 21+/-7.5(um) 21+/-7.5(um)
Tolerance +/-7.5(um) +/-5(um)
Registration +/-12.5(um) +/-10(um)
SRO 70(um) 65(um)
Surface finish Lead application Immersion Tin HVM
ENIG HVM
Lead free application Immersion Tin HVM
ENEPIG HVM
LGA application ENAG HVM
Back end process C4 bump formation Bump pitch 150(um) 130(um)
Bump height (coin bump) 10~30(um) 10~30(um)
Bump diameter (coin bump) 30~150(um) 30~150(um)
Bump height (Round bump) 20~45 / 40~60(um) 20~45 / 40~60(um)
New material SAC305 HVM
SnCu HVM
New method Paste printing HVM
Micro-ball process HVM
Plating bump
Structure Layer count Structure 6/2/6 7/2/7
6/4/6 7/4/7

 

Green Material Set 
 
Category Item Current 2010 2011
Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4
Material Core NPG gen. / Hitachi E679 gen. / R1515 gen. Done
Plugging ink SP-08/SP-10 Done
Dielectric GX-13 Done
SR SR-7200G/AUS-703 Done
ASF I-Ag/I-Tin / ENIG / ENEPIG / HG Done
Bumping SAC305 /SC07 / SA Done
DSC pre-soldering SAC305 / SC07 / SA Done